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BSS84AKS,115
Dual MOSFET, P Channel, 50 V, 160 mA
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| Quantity | Price |
|---|---|
| 1+ | $0.080 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$0.40
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS84AKS,115
Newark Part No.58T9005
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id160mA
Drain Source Voltage Vds50V
Drain Source Voltage Vds P Channel50V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel160mA
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel4.5ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel445mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSS84AKS is a dual P-channel enhancement-mode FET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Logic-level compatible
- Very fast switching
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
160mA
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id P Channel
160mA
Drain Source On State Resistance P Channel
4.5ohm
No. of Pins
6Pins
Power Dissipation P Channel
445mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds
50V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOT-363
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability