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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS84AKW,115
Newark Part No.58T9007
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id150mA
Drain Source On State Resistance7.5ohm
On Resistance Rds(on)4.5ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd260mW
Gate Source Threshold Voltage Max1.6V
Power Dissipation260mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSS84AKW is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The P-channel MOSFET is suitable for relay driver, high-speed line driver, high -side load switch and switching circuit applications.
- Logic-level compatible
- ESD protection up to 1kV
- Very fast switching
- AEC-Q101 qualified
- -55 to 150°C Junction temperature range
Applications
Automotive, Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
150mA
On Resistance Rds(on)
4.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
260mW
Power Dissipation
260mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
50V
Drain Source On State Resistance
7.5ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate