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BST82,215
MOSFET Transistor, N Channel, 190 mA, 100 V, 10 ohm, 5 V, 2 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $0.279 |
| 10+ | $0.225 |
| 25+ | $0.198 |
| 50+ | $0.170 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$1.40
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBST82,215
Newark Part No.25M7816
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id190mA
Drain Source On State Resistance10ohm
On Resistance Rds(on)10ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Power Dissipation Pd830mW
Gate Source Threshold Voltage Max2V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
10ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
5V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
190mA
On Resistance Rds(on)
10ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
830mW
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Alternatives for BST82,215
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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