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BUK7Y12-40EX
Power MOSFET, N Channel, 40 V, 52 A, 0.0093 ohm, SOT-669, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK7Y12-40EX
Newark Part No.90W4282
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id52A
Drain Source On State Resistance9300µohm
On Resistance Rds(on)0.0093ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd65W
Power Dissipation65W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead
Product Overview
The BUK7Y12-40E is a N-channel standard level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175°C rating
- True standard level gate with VGS (th) rating of greater than 1V at 175°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
9300µohm
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation Pd
65W
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
52A
On Resistance Rds(on)
0.0093ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
65W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate