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GAN190-650FBEZ
Gallium Nitride (GaN) Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN5060, Surface Mount
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2,189 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $4.000 |
| 10+ | $3.980 |
| 25+ | $3.960 |
| 50+ | $3.930 |
| 100+ | $3.910 |
| 250+ | $3.800 |
| 500+ | $3.670 |
| 1000+ | $3.470 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$4.00
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGAN190-650FBEZ
Newark Part No.74AK7565
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id11.5A
Drain Source On State Resistance0.138ohm
Typical Gate Charge2.8nC
Transistor Case StyleDFN5060
Transistor MountingSurface Mount
No. of Pins8Pins
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.138ohm
Transistor Case Style
DFN5060
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
11.5A
Typical Gate Charge
2.8nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability