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GANE3R9-150QBAZ
Gallium Nitride (GaN) Transistor, 150 V, 100 A, 0.0039 ohm, 20 nC, VQFN, Surface Mount
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2,322 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $8.840 |
| 10+ | $7.630 |
| 25+ | $6.950 |
| 50+ | $6.680 |
| 100+ | $6.420 |
| 250+ | $6.070 |
| 500+ | $5.830 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$8.84
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGANE3R9-150QBAZ
Newark Part No.03AM5300
Drain Source Voltage Vds150V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0039ohm
Typical Gate Charge20nC
Transistor Case StyleVQFN
Transistor MountingSurface Mount
No. of Pins25Pins
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.0039ohm
Transistor Case Style
VQFN
No. of Pins
25Pins
Qualification
-
Continuous Drain Current Id
100A
Typical Gate Charge
20nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability