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NX3008NBKW,115
Power MOSFET, N Channel, 30 V, 350 mA, 1.4 ohm, SOT-323, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.280 |
| 10+ | $0.194 |
| 100+ | $0.081 |
| 500+ | $0.068 |
| 1000+ | $0.055 |
| 2500+ | $0.047 |
| 12000+ | $0.037 |
| 27000+ | $0.035 |
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNX3008NBKW,115
Newark Part No.75T7845
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id350mA
Drain Source On State Resistance1.4ohm
On Resistance Rds(on)1ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd260mW
Gate Source Threshold Voltage Max900mV
Power Dissipation260mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
Product Overview
The NX3008NBKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications.
- Very fast switching
- ESD protection up to 2kV
- Low threshold voltage
- AEC-Q101 qualified
- -55 to 150°C Junction temperature range
Applications
Automotive, Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
350mA
On Resistance Rds(on)
1ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
260mW
Power Dissipation
260mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
1.4ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate