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NXV55UNR
Power MOSFET, N Channel, 30 V, 1.9 A, 66 mohm, SOT-23, Surface Mount
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.376 | $1.88 |
| Total Price | $1.88 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.376 |
| 15+ | $0.235 |
| 25+ | $0.230 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.093 |
| 9000+ | $0.081 |
| 15000+ | $0.079 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNXV55UNRCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.
Full Reel86AK5891
Re-Reel21AJ6675RL
Cut Tape21AJ6675
Product RangeTrench
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.9A
On Resistance Rds(on)0.05ohm
Drain Source On State Resistance66mohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation340mW
Power Dissipation Pd340mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrench
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
NXV55UNR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.
- Low threshold voltage, very fast switching
- Drain-source voltage is 30V max at Tj = 25°C
- Gate-source voltage is 8V maximum
- Drain current is 2.3A max at VGS = 4.5V; Tamb = 25°C; t ≤ 5s
- Peak drain current is 7.6A max at Tamb = 25°C; single pulse; tp ≤ 10µs
- Total power dissipation is 340mW max at Tamb = 25°C
- Drain-source on-state resistance is 50mohm typ at VGS = 4.5V; ID = 1.9A; Tj = 25°C
- Source-drain voltage is 0.6V typ at IS = 0.4A; VGS = 0V; Tj = 25°C
- Total gate charge is 5.8nC typ at VDS = 15V; ID = 1.9A; VGS = 4.5V; Tj = 25°C
- Ambient temperature range from -55 to 150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.05ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
340mW
No. of Pins
3Pins
Product Range
Trench
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
1.9A
Drain Source On State Resistance
66mohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
Power Dissipation Pd
340mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability