Print Page
86 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $0.361 |
10+ | $0.220 |
25+ | $0.189 |
50+ | $0.158 |
100+ | $0.126 |
250+ | $0.120 |
500+ | $0.113 |
1000+ | $0.102 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.36
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNXV55UNR
Newark Part No.21AJ6675
Product RangeTrench
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.9A
Drain Source On State Resistance66mohm
On Resistance Rds(on)0.05ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation Pd340mW
Power Dissipation340mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrench
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
NXV55UNR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.
- Low threshold voltage, very fast switching
- Drain-source voltage is 30V max at Tj = 25°C
- Gate-source voltage is 8V maximum
- Drain current is 2.3A max at VGS = 4.5V; Tamb = 25°C; t ≤ 5s
- Peak drain current is 7.6A max at Tamb = 25°C; single pulse; tp ≤ 10µs
- Total power dissipation is 340mW max at Tamb = 25°C
- Drain-source on-state resistance is 50mohm typ at VGS = 4.5V; ID = 1.9A; Tj = 25°C
- Source-drain voltage is 0.6V typ at IS = 0.4A; VGS = 0V; Tj = 25°C
- Total gate charge is 5.8nC typ at VDS = 15V; ID = 1.9A; VGS = 4.5V; Tj = 25°C
- Ambient temperature range from -55 to 150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
66mohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
340mW
No. of Pins
3Pins
Product Range
Trench
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
1.9A
On Resistance Rds(on)
0.05ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
Power Dissipation
340mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Alternatives for NXV55UNR
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability