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PMV16XNR
Power MOSFET, N Channel, 20 V, 6.8 A, 0.016 ohm, TO-236AB, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.484 |
| 10+ | $0.314 |
| 25+ | $0.266 |
| 50+ | $0.217 |
| 100+ | $0.169 |
| 250+ | $0.158 |
| 500+ | $0.146 |
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Multiple: 1
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV16XNR
Newark Part No.68Y7841
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6.8A
Drain Source On State Resistance0.016ohm
On Resistance Rds(on)0.016ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Power Dissipation Pd510mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max650mV
Power Dissipation510mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The PMV16XN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications.
- Low threshold voltage
- Very fast switching
- Enhanced power dissipation capability of 1200mW
- -55 to 150°C Junction temperature range
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.016ohm
Transistor Case Style
TO-236AB
Power Dissipation Pd
510mW
Gate Source Threshold Voltage Max
650mV
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
6.8A
On Resistance Rds(on)
0.016ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
510mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for PMV16XNR
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate