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Available to Order
Manufacturer Standard Lead Time: 59 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.760 |
| 10+ | $0.491 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.80
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV40UN2R
Newark Part No.52Y7630
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id4.4A
On Resistance Rds(on)0.036ohm
Drain Source On State Resistance44mohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd490mW
Gate Source Threshold Voltage Max650mV
Power Dissipation490mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The PMV40UN2 is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications.
- Low threshold voltage
- Very fast switching
- Enhanced power dissipation capability of 1000mW
- -55 to 150°C Junction temperature range
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.036ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
650mV
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
4.4A
Drain Source On State Resistance
44mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
490mW
Power Dissipation
490mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for PMV40UN2R
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability