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Quantity | Price |
---|---|
1+ | $0.436 |
10+ | $0.291 |
25+ | $0.246 |
50+ | $0.202 |
100+ | $0.157 |
250+ | $0.150 |
500+ | $0.141 |
1000+ | $0.134 |
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Multiple: 5
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV65XP,215
Newark Part No.34R4595
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.3A
On Resistance Rds(on)0.058ohm
Drain Source On State Resistance0.058ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd833mW
Gate Source Threshold Voltage Max750mV
Power Dissipation833mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The PMV65XP,215 is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Low Threshold Voltage
- Low On-state Resistance
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.058ohm
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
750mV
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
4.3A
Drain Source On State Resistance
0.058ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
833mW
Power Dissipation
833mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Alternatives for PMV65XP,215
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability