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PMXB360ENEAZ
MOSFET, N-CH, 80V, 1.1A, DFN1010D ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 59 week(s)
| Quantity | Price |
|---|---|
| 5000+ | $0.253 |
| 10000+ | $0.243 |
Price for:Each (Supplied on Full Reel)
Minimum: 5000
Multiple: 5000
$1,265.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMXB360ENEAZ
Newark Part No.86AK5991
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id1.1A
Drain Source On State Resistance0.345ohm
Transistor Case StyleDFN1010D
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.1A
Transistor Case Style
DFN1010D
Rds(on) Test Voltage
10V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.345ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Alternatives for PMXB360ENEAZ
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability