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BLF881,112
RF FET Transistor, 50 V, 500 mA, 33 W, 10 MHz, 1 GHz, SOT-467C
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
Product Information
ManufacturerNXP
Manufacturer Part NoBLF881,112
Newark Part No.70R2883
Technical Datasheet
Drain Source Voltage Vds50V
Continuous Drain Current Id500mA
Power Dissipation33W
Operating Frequency Min10MHz
Power Dissipation Pd33W
Operating Frequency Max1GHz
Transistor Case StyleSOT-467C
No. of Pins2Pins
RF Transistor CaseSOT-467C
Operating Temperature Max200°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Drain Source Voltage Vds
50V
Power Dissipation
33W
Power Dissipation Pd
33W
Transistor Case Style
SOT-467C
RF Transistor Case
SOT-467C
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
500mA
Operating Frequency Min
10MHz
Operating Frequency Max
1GHz
No. of Pins
2Pins
Operating Temperature Max
200°C
Transistor Mounting
Flange
MSL
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate