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MRF6V2300NBR5
RF FET Transistor, 110 V, 10 MHz, 600 MHz, TO-272
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
Product Information
ManufacturerNXP
Manufacturer Part NoMRF6V2300NBR5
Newark Part No.95M9601
Technical Datasheet
Drain Source Voltage Vds110V
Continuous Drain Current Id-
Power Dissipation-
Power Dissipation Pd-
Operating Frequency Min10MHz
Operating Frequency Max600MHz
Transistor Case StyleTO-272
No. of Pins4Pins
RF Transistor CaseTO-272
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MRF6V2300NBR5 is a N-channel RF Power FET designed primarily for CW large signal output and driver applications with frequencies up to 600MHz. Devices are unmatched and are suitable for use in scientific applications.
- Characterized with series equivalent large signal impedance parameters
- Qualified up to a maximum of 50VDD operation
- Integrated ESD protection
- 225°C Capable plastic package
Applications
Industrial, Medical, Power Management
Technical Specifications
Drain Source Voltage Vds
110V
Power Dissipation
-
Operating Frequency Min
10MHz
Transistor Case Style
TO-272
RF Transistor Case
TO-272
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Power Dissipation Pd
-
Operating Frequency Max
600MHz
No. of Pins
4Pins
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
MSL 3 - 168 hours
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate