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MRFE6VP61K25HSR5
RF FET Transistor, 125 V, 100 mA, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230S
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 50+ | $209.260 |
Price for:Each (Supplied on Cut Tape)
Minimum: 50
Multiple: 50
$10,463.00
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Product Information
ManufacturerNXP
Manufacturer Part NoMRFE6VP61K25HSR5
Newark Part No.19T6332
Technical Datasheet
Drain Source Voltage Vds125V
Continuous Drain Current Id100mA
Power Dissipation1.333kW
Power Dissipation Pd1.333kW
Operating Frequency Min1.8MHz
Operating Frequency Max600MHz
Transistor Case StyleNI-1230S
No. of Pins4Pins
RF Transistor CaseNI-1230S
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MRFE6VP61K25HSR5 is a 125V N-channel wideband RF Power LDMOS Transistor featured with high ruggedness. This enhancement mode lateral MOSFET is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
- Unmatched input and output allowing wide frequency range utilization
- Device can be used single-ended or in a push-pull configuration
- Qualified up to a maximum of 50VDD operation
- Characterized from 30 to 50V for extended power range
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate-source voltage for improved class C operation
- Characterized with series equivalent large-signal impedance parameters
- 74.6% Typical efficiency
- 22.9dB Typical power gain (at 230MHz)
- -6/+10V Gate to Source voltage (VGS)
- LDMOS Die technology
- 0.159°C/W Thermal resistance
Applications
Industrial, Communications & Networking, Defence, Military & Aerospace, RF Communications
Warnings
ESD sensitive device, take proper precaution while handling the device.
Technical Specifications
Drain Source Voltage Vds
125V
Power Dissipation
1.333kW
Operating Frequency Min
1.8MHz
Transistor Case Style
NI-1230S
RF Transistor Case
NI-1230S
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
100mA
Power Dissipation Pd
1.333kW
Operating Frequency Max
600MHz
No. of Pins
4Pins
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate