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FDB33N25TM
MOSFET Transistor, N Channel, 33 A, 250 V, 0.077 ohm, 10 V, 3 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $2.930 |
| 10+ | $2.330 |
| 100+ | $1.890 |
| 500+ | $1.880 |
| 1600+ | $1.580 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB33N25TM
Newark Part No.95W3149
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id33A
Drain Source On State Resistance0.094ohm
On Resistance Rds(on)0.077ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd235W
Gate Source Threshold Voltage Max3V
Power Dissipation235W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.094ohm
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
On Resistance Rds(on)
0.077ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
235W
Power Dissipation
235W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability