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FDB52N20TM
MOSFET Transistor, N Channel, 52 A, 200 V, 0.041 ohm, 10 V, 5 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $3.010 |
| 10+ | $2.570 |
| 25+ | $2.420 |
| 50+ | $2.280 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB52N20TM
Newark Part No.31Y1340
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id52A
Drain Source On State Resistance0.041ohm
On Resistance Rds(on)0.041ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Power Dissipation Pd357W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation357W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.041ohm
Transistor Case Style
TO-263AB
Power Dissipation Pd
357W
Gate Source Threshold Voltage Max
5V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
52A
On Resistance Rds(on)
0.041ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
357W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability