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| Quantity | Price |
|---|---|
| 1+ | $1.600 |
| 10+ | $1.140 |
| 25+ | $1.070 |
| 50+ | $0.988 |
| 100+ | $0.915 |
| 250+ | $0.847 |
| 500+ | $0.777 |
| 1000+ | $0.729 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.60
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD5N50NZTM
Newark Part No.54AH8625
Product RangeUniFET II
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id4A
On Resistance Rds(on)1.38ohm
Drain Source On State Resistance1.38ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation62W
Power Dissipation Pd62W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeUniFET II
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
1.38ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
62W
No. of Pins
3Pins
Product Range
UniFET II
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
1.38ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
62W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability