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FDMS86350ET80
MOSFET, N-CH, 80V, 198A, 175DEG C, 187W ROHS COMPLIANT: YES
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| Quantity | Price |
|---|---|
| 1+ | $7.080 |
| 10+ | $5.460 |
| 25+ | $5.020 |
| 50+ | $4.580 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$7.08
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMS86350ET80
Newark Part No.54AH8644
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id198A
Drain Source On State Resistance2000µohm
On Resistance Rds(on)0.002ohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation Pd187W
Power Dissipation187W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
2000µohm
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Power Dissipation Pd
187W
No. of Pins
8Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
198A
On Resistance Rds(on)
0.002ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.8V
Power Dissipation
187W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability