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FDP3651U
MOSFET Transistor, N Channel, 80 A, 100 V, 18 mohm, 10 V, 4.5 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $3.090 |
| 10+ | $2.670 |
| 100+ | $1.950 |
| 500+ | $1.780 |
| 1600+ | $1.750 |
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Multiple: 1
$3.09
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP3651U
Newark Part No.34M6122
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
Drain Source On State Resistance0.018ohm
On Resistance Rds(on)0.018ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd255W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation255W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.018ohm
Transistor Case Style
TO-220
Power Dissipation Pd
255W
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.018ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
255W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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