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FGA60N65SMD
IGBT, 650V, 120A, TO-3PN
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533 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $8.640 |
| 10+ | $7.640 |
| 25+ | $6.630 |
| 50+ | $5.630 |
| 100+ | $5.300 |
| 250+ | $4.970 |
Price for:Each
Minimum: 1
Multiple: 1
$8.64
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFGA60N65SMD
Newark Part No.46AC0815
Technical Datasheet
DC Collector Current120A
Continuous Collector Current120A
Collector Emitter Saturation Voltage1.9V
Collector Emitter Saturation Voltage Vce(on)1.9V
Power Dissipation Pd600W
Power Dissipation600W
Collector Emitter Voltage V(br)ceo650V
Collector Emitter Voltage Max650V
Transistor Case StyleTO-3PN
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
Technical Specifications
DC Collector Current
120A
Collector Emitter Saturation Voltage
1.9V
Power Dissipation Pd
600W
Collector Emitter Voltage V(br)ceo
650V
Transistor Case Style
TO-3PN
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead (27-Jun-2024)
Continuous Collector Current
120A
Collector Emitter Saturation Voltage Vce(on)
1.9V
Power Dissipation
600W
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability