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| Quantity | Price |
|---|---|
| 1+ | $2.510 |
| 10+ | $2.060 |
| 25+ | $1.960 |
| 50+ | $1.850 |
| 100+ | $1.750 |
| 250+ | $1.630 |
| 500+ | $1.500 |
| 1600+ | $1.460 |
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Multiple: 1
$2.51
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB44N10TM
Newark Part No.54AH8749
Product RangeQFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id43.5A
On Resistance Rds(on)0.03ohm
Drain Source On State Resistance0.03ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd146W
Power Dissipation146W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeQFET
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.03ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
146W
No. of Pins
3Pins
Product Range
QFET
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
43.5A
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
146W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability