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NTB082N65S3F
MOSFET, N-CH, 650V, 40A, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTB082N65S3F
Newark Part No.62AC7350
Product RangeSUPERFET III FRFET
Technical Datasheet
Packaging Options
2,070 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $10.690 |
| 10+ | $8.770 |
| 25+ | $8.430 |
| 50+ | $8.110 |
| 100+ | $7.780 |
| 250+ | $7.670 |
| 500+ | $7.560 |
| 1600+ | $7.500 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$10.69
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTB082N65S3F
Newark Part No.62AC7350
Product RangeSUPERFET III FRFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id40A
On Resistance Rds(on)0.07ohm
Drain Source On State Resistance0.07ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd313W
Gate Source Threshold Voltage Max5V
Power Dissipation313W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSUPERFET III FRFET
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.07ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
SUPERFET III FRFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
313W
Power Dissipation
313W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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