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Product Information
ManufacturerONSEMI
Manufacturer Part NoSI4435DY
Newark Part No.27W2091
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8.8A
On Resistance Rds(on)0.015ohm
Drain Source On State Resistance0.015ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation Pd2.5W
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.015ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
2.5W
No. of Pins
8Pins
Product Range
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
8.8A
Drain Source On State Resistance
0.015ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
Power Dissipation
2.5W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Alternatives for SI4435DY
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability