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Product Information
ManufacturerONSEMI
Manufacturer Part NoBC547B
Newark Part No.67K3328
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max45V
Collector Emitter Voltage V(br)ceo45V
Continuous Collector Current100mA
Power Dissipation Pd1.5W
Power Dissipation1.5W
DC Collector Current100mA
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-92
Transition Frequency300MHz
DC Current Gain hFE200hFE
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BC547B is a through hole, NPN epitaxial silicon transistor in TO-92 package. This device is designed for switching and amplification.
- Collector to emitter breakdown voltage of 45V
- Collector to emitter saturation voltage of 250mV
- Power dissipation of 500mW
- DC collector current of 100mA
- DC current gain of 110 at Ic=2mA
- Operating junction temperature range from -65°C to 150°C
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
45V
Power Dissipation Pd
1.5W
DC Collector Current
100mA
No. of Pins
3Pins
Transition Frequency
300MHz
DC Current Gain hFE Min
200hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
45V
Continuous Collector Current
100mA
Power Dissipation
1.5W
Transistor Mounting
Through Hole
Transistor Case Style
TO-92
DC Current Gain hFE
200hFE
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Alternatives for BC547B
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Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability