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BF256B
JFET Transistor, JFET, -30 V, 13 mA, -8 V, TO-92, 3 Pin, 150 °C
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| Quantity | Price |
|---|---|
| 1+ | $0.499 |
| 10+ | $0.344 |
| 100+ | $0.235 |
| 500+ | $0.210 |
| 1000+ | $0.195 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBF256B
Newark Part No.31Y0551
Technical Datasheet
Breakdown Voltage Vbr-30V
Gate Source Breakdown Voltage Max-30V
Zero Gate Voltage Drain Current Idss Min6mA
Zero Gate Voltage Drain Current Max13mA
Gate Source Cutoff Voltage Max-8V
Transistor Case StyleTO-92
No. of Pins3 Pin
Operating Temperature Max150°C
Transistor TypeRF FET
Channel TypeN Channel
Transistor MountingThrough Hole
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
BF256B is a N-Channel JFET RF amplifier. This device is designed for VHF / UHF amplifiers.
- Sourced from Process 50
- 30V drain gate voltage (TA = 25°C), 10mA forward gate current (TA = 25°C)
- Minimum gate source breakdown voltage is -30V (VDS = 0, IG = 1µA)
- Gate source cut off voltage range from -0.5 to -8.0V (TA = 25°C, VDS = 15V, ID = 10nA)
- Gate reverse current is -5nA max (VGS = -20V, VDS = 0, TA = 25°C)
- Zero gate voltage drain current range from 6 to 13mA (VDS = 15V, VGS = 0, TA = 25°C)
- Total device dissipation at TA = 25°C is 350mW
- TO-92-3 package, operating temperature range from -55 to 150°C
Technical Specifications
Breakdown Voltage Vbr
-30V
Zero Gate Voltage Drain Current Idss Min
6mA
Gate Source Cutoff Voltage Max
-8V
No. of Pins
3 Pin
Transistor Type
RF FET
Transistor Mounting
Through Hole
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Gate Source Breakdown Voltage Max
-30V
Zero Gate Voltage Drain Current Max
13mA
Transistor Case Style
TO-92
Operating Temperature Max
150°C
Channel Type
N Channel
Product Range
-
MSL
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability