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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS123L
Newark Part No.84Y9816
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
On Resistance Rds(on)2.98ohm
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd360mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.405V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Alternatives for BSS123L
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Product Overview
The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such as small servo motor controller, power MOSFET gate drivers, logic level transistorss, high speed line drivers, power management/power supply and switching applications.
- High density cell design for low on-resistance
- Rugged and reliable
- Very low capacitance
- Fast switching speed
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
2.98ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
360mW
Gate Source Threshold Voltage Max
1.405V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
170mA
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate