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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS138
Newark Part No.58K8769
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id220mA
Drain Source On State Resistance0.7ohm
On Resistance Rds(on)0.7ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd360mW
Gate Source Threshold Voltage Max1.3V
Transistor Case StyleSOT-23
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The BSS138 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while provide rugged, reliable and fast switching performance thus BSS138 are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Drain to source voltage (Vds) of 50V
- Gate to source voltage of ±20V
- Low on state resistance of 3.5ohm at Vgs 10V
- Continuous drain current of 220mA
- Maximum power dissipation of 360mW
- Operating junction temperature range from -55°C to 150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
50V
Drain Source On State Resistance
0.7ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
360mW
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
220mA
On Resistance Rds(on)
0.7ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.3V
Power Dissipation
360mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
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Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
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Product Compliance Certificate
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