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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB2614
Newark Part No.61M6192
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id62A
Drain Source On State Resistance0.027ohm
On Resistance Rds(on)0.0229ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd260W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation260W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.027ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
260W
Gate Source Threshold Voltage Max
4V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
62A
On Resistance Rds(on)
0.0229ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
260W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Alternatives for FDB2614
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability