Print Page
FDC6303N
Dual MOSFET, N Channel, 25 V, 680 mA, 450 mohm
Image is for illustrative purposes only. Please refer to product description.
415 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.570 |
| 10+ | $0.424 |
| 25+ | $0.387 |
| 50+ | $0.352 |
| 100+ | $0.315 |
| 250+ | $0.277 |
| 500+ | $0.240 |
| 1000+ | $0.193 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.57
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6303N
Newark Part No.58M6619
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id680mA
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel450mohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for FDC6303N
1 Product Found
Product Overview
The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
- 8V Gate-source voltage
- 0.68A Continuous drain/output current
- 2A Pulsed drain/output current
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
680mA
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds
25V
Continuous Drain Current Id N Channel
680mA
Drain Source On State Resistance N Channel
450mohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate