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FDC6561AN
Dual MOSFET, N Channel, 30 V, 2.5 A, 0.082 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 13 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.311 |
| 6000+ | $0.306 |
| 12000+ | $0.301 |
| 18000+ | $0.293 |
| 30000+ | $0.283 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$933.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6561AN
Newark Part No.67R2043
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id2.5A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.082ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
- Low gate charge
- Very fast switching
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.082ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDC6561AN
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate