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FDD306P
Power MOSFET, P Channel, 12 V, 6.7 A, 0.028 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.310 |
| 10+ | $1.070 |
| 25+ | $0.986 |
| 50+ | $0.900 |
| 100+ | $0.816 |
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Multiple: 5
$6.55
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD306P
Newark Part No.96K9867
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id6.7A
Drain Source On State Resistance0.028ohm
On Resistance Rds(on)0.09ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd52W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max500mV
Power Dissipation52W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FDD306P is a 1.8V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handing capability
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
6.7A
On Resistance Rds(on)
0.09ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
52W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.028ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
52W
Gate Source Threshold Voltage Max
500mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability