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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $1.740 |
| 10+ | $1.450 |
| 25+ | $1.370 |
| 50+ | $1.280 |
| 100+ | $1.200 |
| 250+ | $1.120 |
| 500+ | $1.050 |
| 1000+ | $1.030 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.74
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD86102LZ
Newark Part No.88T3248
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id42A
Drain Source On State Resistance0.0225ohm
On Resistance Rds(on)0.0178ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd54W
Gate Source Threshold Voltage Max1.5V
Power Dissipation54W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Alternatives for FDD86102LZ
1 Product Found
Product Overview
The FDD86102LZ is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and switching loss. The G-S Zener has been added to enhance ESD voltage level.
- Very low Qg and Qgd compared to competing Trench technologies
- Fast switching speed
- 100% UIL tested
- 6kV typical HBM ESD protection level
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
42A
On Resistance Rds(on)
0.0178ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
54W
Power Dissipation
54W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0225ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate