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FDG6322C
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 220 mA, 220 mA, 2.6 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 40 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.153 |
| 6000+ | $0.148 |
| 12000+ | $0.145 |
| 18000+ | $0.144 |
| 30000+ | $0.142 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$459.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6322C
Newark Part No.67R2050
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id220mA
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Drain Source Voltage Vds25V
Continuous Drain Current Id N Channel220mA
Continuous Drain Current Id P Channel220mA
Drain Source On State Resistance N Channel2.6ohm
Drain Source On State Resistance P Channel2.6ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDG6322C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very small package outline
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds
25V
Continuous Drain Current Id P Channel
220mA
Drain Source On State Resistance P Channel
2.6ohm
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
220mA
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
220mA
Drain Source On State Resistance N Channel
2.6ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for FDG6322C
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate