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FDMQ8403
Dual MOSFET, Quad N Channel, 100 V, 6 A, 0.11 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDMQ8403
Newark Part No.
Re-Reel07AH3924
Cut Tape07AH3924
Product RangePowerTrench GreenBridge Series
Your Part Number
305 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $4.780 | $4.78 |
| Total Price | $4.78 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $4.780 |
| 10+ | $3.060 |
| 25+ | $2.800 |
| 50+ | $2.540 |
| 100+ | $2.270 |
| 250+ | $2.190 |
| 500+ | $2.100 |
| 1000+ | $1.980 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMQ8403
Newark Part No.
Re-Reel07AH3924
Cut Tape07AH3924
Product RangePowerTrench GreenBridge Series
Technical Datasheet
Channel TypeQuad N Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds100V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id6A
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.11ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleWDFN
No. of Pins12Pins
Power Dissipation N Channel17W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangePowerTrench GreenBridge Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
FDMQ8403 is a MOSFET – N-Channel, POWERTRENCH®,Greenbridge™ series of high-efficiency bridge rectifier. This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. Application includes high efficiency bridge rectifiers.
- 85mohm typical static drain to source on resistance (VGS = 10V, ID = 3A)
- Substantial efficiency benefit in PD solutions
- Gate to source voltage is ±20V, 1nA maximum zero gate voltage drain current (VGS = 0V, VDS = 80V)
- 2.8V typical drain to source breakdown voltage (VGS = VDS, ID = 250µA)
- 6S typical forward transconductance (VDS = 10V, ID = 3A)
- 4.1ns typical turn on delay time (VDD = 50V, ID = 3A, VGS = 10V, RGEN = 6ohm)
- 1.2ns typical rise time (VDD = 50V, ID = 3A, VGS = 10V, RGEN = 6ohm)
- 0.9nC typical gate to source charge (VDD = 50V, ID = 3A)
- 33ns typical reverse recovery time (IF = 3A, di/dt = 100 A/µs)
- WDFN12 package, operating and storage junction temperature range from -55 to +150°C
Technical Specifications
Channel Type
Quad N Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
6A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
12Pins
Power Dissipation P Channel
-
Product Range
PowerTrench GreenBridge Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.11ohm
Transistor Case Style
WDFN
Power Dissipation N Channel
17W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate