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FDP2572
Power MOSFET, N Channel, 150 V, 29 A, 0.045 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 500+ | $1.280 |
| 1600+ | $1.110 |
| 3200+ | $1.110 |
| 5600+ | $1.100 |
Price for:Each
Minimum: 800
Multiple: 800
$1,024.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP2572
Newark Part No.28H9698
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id29A
On Resistance Rds(on)0.045ohm
Drain Source On State Resistance0.045ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd135W
Transistor Case StyleTO-220AB
Gate Source Threshold Voltage Max4V
Power Dissipation135W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The FDP2572 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for use in synchronous rectification, battery protection circuit and micro solar inverter applications.
- Low Miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.045ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
135W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
29A
Drain Source On State Resistance
0.045ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
Power Dissipation
135W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate