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Available to Order
Manufacturer Standard Lead Time: 5 week(s)
Quantity | Price |
---|---|
1+ | $2.190 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$5,475.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS4470
Newark Part No.78K5930
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id12.5A
Drain Source On State Resistance0.009ohm
On Resistance Rds(on)0.006ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.9V
Transistor Case StyleSOIC
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max175°C
Qualification-
Product Range-
Product Overview
The FDS4470 is a N-channel MOSFET produced using PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 45nC low gate charge
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
12.5A
On Resistance Rds(on)
0.006ohm
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
3.9V
Power Dissipation
2.5W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate