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FDS86141
Power MOSFET, N Channel, 100 V, 7 A, 0.019 ohm, SOIC, Surface Mount
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2,021 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.970 |
| 10+ | $1.790 |
| 25+ | $1.680 |
| 50+ | $1.570 |
| 100+ | $1.460 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.97
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS86141
Newark Part No.88T3361
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id7A
Drain Source On State Resistance0.019ohm
On Resistance Rds(on)0.019ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.1V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDS86141 is a N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Low-profile
- 100% UIL tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7A
On Resistance Rds(on)
0.019ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.019ohm
Transistor Case Style
SOIC
Power Dissipation Pd
5W
Gate Source Threshold Voltage Max
3.1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability