Print Page
FDT3612
Power MOSFET, N Channel, 100 V, 3.7 A, 0.12 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
2 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.099 |
| 25+ | $0.099 |
| 50+ | $0.099 |
| 100+ | $0.099 |
| 250+ | $0.099 |
| 500+ | $0.099 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.10
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDT3612
Newark Part No.58K1477
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id3.7A
Drain Source On State Resistance0.12ohm
On Resistance Rds(on)0.12ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3W
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleSOT-223
Power Dissipation3W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FDT3612 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 14nC Typical low gate charge
Applications
Power Management, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3W
Transistor Case Style
SOT-223
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
3.7A
On Resistance Rds(on)
0.12ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
3W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability