Print Page
FDY4000CZ
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 600 mA, 600 mA, 0.7 ohm
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDY4000CZ
Newark Part No.34M6134
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id600mA
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel600mA
Continuous Drain Current Id P Channel600mA
Drain Source On State Resistance N Channel0.7ohm
Drain Source On State Resistance P Channel0.7ohm
Transistor Case StyleSC-89
No. of Pins6Pins
Power Dissipation N Channel625mW
Power Dissipation P Channel625mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
The FDY4000CZ is a N/P-channel complementary MOSFET designed using advanced PowerTrench® process. The device is suitable for use with level shifting, power supply converter circuits, load/power switching cell phones and pagers applications.
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
600mA
Drain Source On State Resistance P Channel
0.7ohm
No. of Pins
6Pins
Power Dissipation P Channel
625mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
600mA
Drain Source On State Resistance N Channel
0.7ohm
Transistor Case Style
SC-89
Power Dissipation N Channel
625mW
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate