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| Quantity | Price |
|---|---|
| 1+ | $2.370 |
| 10+ | $1.950 |
| 25+ | $1.850 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$2.37
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB55N10TM
Newark Part No.46AC0856
Product RangeQFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id55A
Drain Source On State Resistance0.026ohm
On Resistance Rds(on)0.021ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd155W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation155W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeQFET
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.026ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
155W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
QFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
55A
On Resistance Rds(on)
0.021ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
155W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for FQB55N10TM
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4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability