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Quantity | Price |
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25+ | $0.746 |
50+ | $0.674 |
100+ | $0.602 |
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1000+ | $0.480 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD13N10LTM
Newark Part No.31Y1523
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id10A
On Resistance Rds(on)0.142ohm
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd40W
Gate Source Threshold Voltage Max2V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FQD13N10LTM is a QFET® enhancement-mode N-channel Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- Low level gate drive requirements allowing direct operation form logic drivers
- 100% avalanche tested
- 8.7nC typical low gate charge
- 20pF typical low Crss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.142ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
40W
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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