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FQPF2N60C
Power MOSFET, N Channel, 600 V, 2 A, 4.7 ohm, TO-220F, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQPF2N60C
Newark Part No.91K9885
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id2A
Drain Source On State Resistance4.7ohm
On Resistance Rds(on)4.7ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Power Dissipation Pd23W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation23W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The FQPF2N60C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (8.5nC)
- Low Crss (4.3pF)
- 100% avalanche tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2A
On Resistance Rds(on)
4.7ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
23W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Drain Source Voltage Vds
600V
Drain Source On State Resistance
4.7ohm
Transistor Case Style
TO-220F
Power Dissipation Pd
23W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate