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25+ | $4.570 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoHGT1S10N120BNST
Newark Part No.31Y1824
Technical Datasheet
DC Collector Current35A
Continuous Collector Current35A
Collector Emitter Saturation Voltage2.45V
Collector Emitter Saturation Voltage Vce(on)2.45V
Power Dissipation Pd298W
Power Dissipation298W
Collector Emitter Voltage V(br)ceo1.2kV
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-263AB
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product Range-
Product Overview
The HGT1S10N120BNST is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
- Short-circuit rating
- Avalanche rated
- 2.45V @ IC = 10A Low saturation voltage
- 140ns Fall time @ TJ = 150°C
- 298W Total power dissipation @ TC = 25°C
Technical Specifications
DC Collector Current
35A
Collector Emitter Saturation Voltage
2.45V
Power Dissipation Pd
298W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
TO-263AB
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (27-Jun-2024)
Continuous Collector Current
35A
Collector Emitter Saturation Voltage Vce(on)
2.45V
Power Dissipation
298W
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Surface Mount
MSL
MSL 1 - Unlimited
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability