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MMBFJ201
JFET Transistor, Junction Field Effect, -40 V, 1 mA, -1.5 V, SOT-23, 3 Pin, 150 °C
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| Quantity | Price |
|---|---|
| 1+ | $0.463 |
| 25+ | $0.273 |
| 50+ | $0.222 |
| 100+ | $0.171 |
| 250+ | $0.168 |
| 500+ | $0.165 |
| 1000+ | $0.151 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBFJ201
Newark Part No.58K9426
Technical Datasheet
Gate Source Breakdown Voltage Max-40V
Breakdown Voltage Vbr-40V
Zero Gate Voltage Drain Current Max1mA
Zero Gate Voltage Drain Current Idss Min200µA
Gate Source Cutoff Voltage Max-1.5V
Transistor Case StyleSOT-23
Operating Temperature Max150°C
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeN Channel
Transistor MountingSurface Mount
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBFJ201 is a 40V N-channel Junction (JFET) Field Effect Transistor designed primarily for low level audio and general purpose applications with high impedance signal sources. This product is general usage and suitable for many different applications.
- 40V Drain gate voltage (VDG)
- 50mA Forward gate current
- 357°C/W Thermal resistance, junction to ambient
Applications
Audio, Power Management
Technical Specifications
Gate Source Breakdown Voltage Max
-40V
Zero Gate Voltage Drain Current Max
1mA
Gate Source Cutoff Voltage Max
-1.5V
Operating Temperature Max
150°C
No. of Pins
3 Pin
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Breakdown Voltage Vbr
-40V
Zero Gate Voltage Drain Current Idss Min
200µA
Transistor Case Style
SOT-23
Transistor Type
JFET
Channel Type
N Channel
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for MMBFJ201
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability