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MMBFJ309LT1G
JFET Transistor, Junction Field Effect, -25 V, 30 mA, -4 V, SOT-23, 3 Pin, 150 °C
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| Quantity | Price |
|---|---|
| 1+ | $0.118 |
| 25+ | $0.118 |
| 50+ | $0.118 |
| 100+ | $0.118 |
| 250+ | $0.118 |
| 500+ | $0.109 |
| 1000+ | $0.109 |
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Minimum: 1
Multiple: 1
$0.12
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBFJ309LT1G
Newark Part No.45J1519
Technical Datasheet
Gate Source Breakdown Voltage Max-25V
Breakdown Voltage Vbr-25V
Zero Gate Voltage Drain Current Max30mA
Zero Gate Voltage Drain Current Idss Min12mA
Gate Source Cutoff Voltage Max-4V
Transistor Case StyleSOT-23
Operating Temperature Max150°C
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeN Channel
Transistor MountingSurface Mount
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBFJ309LT1G is a N-channel JFET designed for high frequency amplifiers and oscillators. The device offers interchangeable drain and source, space saving surface-mount package. The Low RDS (ON) provides higher efficiency and extends battery life.
- 25VDC Drain-source voltage
- 25VDC Gate-source voltage
- 10mA Gate current
Applications
Industrial, Power Management
Technical Specifications
Gate Source Breakdown Voltage Max
-25V
Zero Gate Voltage Drain Current Max
30mA
Gate Source Cutoff Voltage Max
-4V
Operating Temperature Max
150°C
No. of Pins
3 Pin
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Breakdown Voltage Vbr
-25V
Zero Gate Voltage Drain Current Idss Min
12mA
Transistor Case Style
SOT-23
Transistor Type
JFET
Channel Type
N Channel
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for MMBFJ309LT1G
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Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability