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NGTB40N65FL2WG
IGBT, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 Pins
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| Quantity | Price |
|---|---|
| 1+ | $6.590 |
| 10+ | $5.870 |
| 25+ | $5.150 |
| 60+ | $4.420 |
| 120+ | $3.810 |
| 270+ | $3.190 |
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Minimum: 1
Multiple: 1
$6.59
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNGTB40N65FL2WG
Newark Part No.31Y3222
Technical Datasheet
DC Collector Current80A
Continuous Collector Current80A
Collector Emitter Saturation Voltage Vce(on)1.7V
Collector Emitter Saturation Voltage1.7V
Power Dissipation Pd366W
Power Dissipation366W
Collector Emitter Voltage V(br)ceo650V
Collector Emitter Voltage Max650V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
DC Collector Current
80A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation Pd
366W
Collector Emitter Voltage V(br)ceo
650V
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Collector Current
80A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation
366W
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability