Print Page
NTBG070N120M3S
SIC MOSFET, N-CH, 1.2KV, 37A, D2PAK-7L ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTBG070N120M3S
Newark Part No.80AK5049
Product RangeEliteSiC Series
1,262 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $9.220 |
| 10+ | $8.480 |
| 25+ | $8.140 |
| 50+ | $7.520 |
| 100+ | $7.060 |
| 250+ | $6.540 |
| 500+ | $6.310 |
| 1600+ | $6.050 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$9.22
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG070N120M3S
Newark Part No.80AK5049
Product RangeEliteSiC Series
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id37A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.091ohm
Transistor Case StyleD2PAK-7L
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation252W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
37A
Drain Source On State Resistance
0.091ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
D2PAK-7L
Rds(on) Test Voltage
18V
Power Dissipation
252W
Product Range
EliteSiC Series
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability