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NTBL045N065SC1
Silicon Carbide MOSFET, Single, N Channel, 73 A, 650 V, 0.045 ohm, H-PSOF
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ManufacturerONSEMI
Manufacturer Part NoNTBL045N065SC1
Newark Part No.47AK6048
Product RangeEliteSiC Series
Your Part Number
2,000 In Stock
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| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $13.830 | $7.210 |
| 10+ | $9.690 | $7.210 |
| 25+ | $9.260 | $7.210 |
| 50+ | $8.840 | $7.210 |
| 100+ | $8.420 | $7.210 |
| 250+ | $8.240 | $7.210 |
| 500+ | $8.050 | $7.210 |
| 1000+ | $7.870 | $7.210 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$7.21
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBL045N065SC1
Newark Part No.47AK6048
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id73A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.045ohm
Transistor Case StyleH-PSOF
No. of Pins8Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation348W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
73A
Drain Source On State Resistance
0.045ohm
No. of Pins
8Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
H-PSOF
Rds(on) Test Voltage
18V
Power Dissipation
348W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability