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Quantity | Price |
---|---|
1+ | $0.613 |
10+ | $0.426 |
25+ | $0.389 |
50+ | $0.352 |
100+ | $0.315 |
250+ | $0.280 |
500+ | $0.244 |
1000+ | $0.186 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS4C09NT1G
Newark Part No.51Y5000
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id52A
On Resistance Rds(on)0.0046ohm
Drain Source On State Resistance0.0058ohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd25.5W
Gate Source Threshold Voltage Max2.1V
Power Dissipation25.5W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0046ohm
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.1V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
52A
Drain Source On State Resistance
0.0058ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
25.5W
Power Dissipation
25.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability